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rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13120 5 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u. s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro devices, inc. 1 of 11 preliminary rfha 3832 1 0 w gan wide - band power amplifier the rfha 3832 is a wideband power amplifier designed for cw and pulsed applications such as wireless infrastructure, radar, two way radios and general purpose amplification. using an advanced high power density gallium nitride (gan) semiconductor process, these high - performance amplifiers achieve high efficiency, flat gain, and large instantaneous bandwidth in a singl e amplifier design. the RFHA3832 is an input matched gan transistor packaged in an air cavity ceramic package which provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. ease of integration is accomplished through the incorporation of optimized input matching network within the package that provides wideband gain and power performance in a single amplifier. an external output match offers the flexibility of further optimizing power and efficiency for any sub - band within the overall bandwidth . functional block diagram ordering information rf ha3832s2 sample bag with 2 pieces RFHA3832sb bag with 5 pieces RFHA3832sq bag with 25 pieces RFHA3832sr short reel with 100 pieces RFHA3832tr7 7 reel with 500 pieces rfha3 832tr13 13 reel with 2500 pieces RFHA3832pcba - 410 fully assembled evaluation board 30 to 1000 mhz, 48v operation package: ain leadless chip carrier , so8 features advanced gan hemt technology output power of 10 w advanced heat - sink technology 3 0mhz to 1000mhz instantaneous bandwidth input internally matched to 50 4 8 v operation typical performance ? output power 40 dbm ? gain 1 5 .5 db ? power added efficiency 48 % - 40 c to 85 c operating temperature large signal models available applications class ab operation for public mobile radio power amplifier stage for commercial wireless infrastructure general purpose tx amplification test instrumentation civilian and military radar rfha 3832
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13120 5 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 2 of 11 RFHA3832 preliminary absolute maximum rat ings parameter rating unit drain voltage (v d ) 150 v gate voltage (v g ) - 8 to +2 v gate current (i g ) 10 ma operational voltage 48 v rf - input power 3 0 dbm ruggedness (vswr) 12:1 storage temperature range - 55 to +12 5 c operating temperature range (t l ) - 40 to +8 5 c operating junction temperature (t j ) 250 c human body model class 1 a mttf (t j < 200 c, 95% confidence limits)* 3.2 e + 0 6 hours mttf (t j < 2 5 0 c, 95% confidence limits)* 5.3 e + 0 4 thermal resistance, r th (junction to case) m easured at t c = 85 c, dc bias only tbd c /w caution! esd sensitive device. rfmd green: rohs compliant per eu directive 2011/65/eu, halogen free per iec 61249 - 2 - 21, <1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony solder. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. * mttf C median time to failure as determined by the process technology wear - out failure mode. refer to product qualification report for fit (random) failure rate. operation of this device beyond any one of these limits may cause permanent damage. for reliable continuous operation, the de vice voltage and current must not exceed the maximum operating values specified in the table above . bias conditions should also satisfy the following expression: p diss < (t j C t c ) / r th j - c and t c = t case nominal operating parameters parameter specification unit condition min typ max recommended operating conditions drain voltage (v dsq ) 48 v gate voltage (v gsq ) - 5 - 0.9 v drain bias current 88 ma rf input power (p in ) 30 dbm input source vswr 10:1 rf performance characteristics frequency range 30 1000 mhz small signal 3db bandwidth linear gain 19 .5 db p in = 10dbm, 3 0mhz to 1000mhz power gain 1 5.5 db p in = 24.5dbm , 3 0mhz to 1000mhz gain variation with temperature tbd db/ c input return loss (s 11 ) - 1 4 db output power (p 3db ) 40 dbm 3 0mhz to 1000mhz power added efficiency (pae) 48 % 3 0mhz to 1000mhz
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13120 5 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 3 of 11 RFHA3832 preliminary parameter specification unit condition min typ max rf functional test test conditions: v dsq = 4 8 v, i dq = 88 ma, cw , f = 500mhz, t = 25oc , performance in a standard tuned test fixture v gs(q ) - 0.9 v power gain 1 5.5 db p in = 24 .5 dbm input return loss - 1 5 db output power 39.8 dbm power added efficiency (pae) 4 6 %
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13120 5 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 4 of 11 RFHA3832 preliminary typical performance in standard fixed tuned test fixture matched for 3 0mhz to 1000mhz : ( t = 25c unless noted )
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13120 5 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 5 of 11 RFHA3832 preliminary typical performance in standard fixed tuned test fixture matched for 3 0mhz to 1000mhz : ( t = 25c unless noted ) (continued)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13120 5 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 6 of 11 RFHA3832 preliminary typical performance in standard fixed tuned test fixture matched for 3 0mhz to 1000mhz: (t = 25c unless noted) (continued)
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13120 5 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 7 of 11 RFHA3832 preliminary package drawing (dimensions in millimeters) pin names and descriptions pin name description 1 vgs gate dc bias pin 2 - 3 rfin rf input 4 - 5 n/c no connect 6 - 7 rfout/vds rf output/drain dc bias pin 8 n/c no connect pkg base gnd ground
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13120 5 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 8 of 11 RFHA3832 preliminary bias instruction for RFHA3832 evaluation board esd sensitive material. please use proper esd precautions when handling devices of evaluation board. evaluation board requires additional external fan cooling. connect all supplies before powering evaluation board. 1. connect rf cables at rfin and rfout. 2. connect ground to the ground supply terminal, and ensure that both the vg and vd grounds are also connected to this ground terminal. 3. apply - 5 v to vg . 4. apply 4 8 v to vd. 5. increase v g until drain current reaches 88ma or desired bias point . 6. turn on the rf input. typical test data provided is measured to sma connector reference plan e, and include evaluation board/ broadband bias network mismatch and losses.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13120 5 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 9 of 11 RFHA3832 preliminary evaluation board schematic evaluation board bill of materials (bom) component value manufacturer part number c1, c2 2400pf dielectric labs inc c08bl242x - 5un - x0 c11 10000pf murata electronics grm188r71h103ka01d c15 10 f murata electronics grm21bf51c106ze15l c20 0.2 pf atc 100a0 r 2 bw150xc c25 4.7 f murata electronics grm55er72a475ka01l r11 0 panasonic erj - 8 geyj 0r00 l20 6.9 nh coilcraft 0906 - 5_lb l21 0.9 h coilcraft 1008af - 901xjlc c21, r21 not used - -
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13120 5 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 10 of 11 RFHA3832 preliminary evaluation board layout device impedances frequency (mhz) rfha1000pcba - 410 (50mhz to 1000mhz) z source ( ) z load ( ) 30 41.63 - j1.26 38.96 + j11.14 50 42.22 - j0.39 40.71 + j8.95 100 42.35 + j0.64 42.26 + j7.84 200 42.87 + j1.91 43.81 + j10.6 300 43.62 + j2.68 46.00 + j14.27 400 44.54 + j3.17 48.99 + j17.91 500 45.50 + j3.33 52.67 + j21.14 600 46.41 + j3.05 57.04 + j23.82 700 47.10 + j2.60 61.92 + j26.0 800 47.61 + j1.89 67.89 + j 27.5 900 47.84 + j1.02 74.02 + j 28.2 1000 47.65 + j0.07 80.76 + j 28.0 note: device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power performance across the entire frequency bandwidth.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 13120 5 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 11 of 11 RFHA3832 preliminary device handling/environmental conditions rfmd does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity, high temperature environment. gan hemt devices are esd sensitive materials. please use proper esd precautions when handling devices or evaluation boards. dc bias the gan hemt device is a depletion mode high electron mobility transistor (hemt). at zero volts v gs the drain of the device is saturated and uncontrolled drain current will destroy the transistor. the gate voltage must be taken to a potential lower tha n the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage ma ximu m limits. rfmd recommends applying v gs = - 5v before applying any v ds . rf power transistor performance capabilities are determined by the applied quiescent drain current. this drain current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. the recommended quiescent drain current (i dq ) shown in the rf typical performance table is chosen to best represent the operational characteristics for this device, consid ering manufacturing variations and expected performanc e. the user may choose alternate conditions for biasing this device based on performance tradeoffs. mounting and thermal considerations the thermal resistance provided as r th (junction to case) represents only the packaged device thermal characteristics. t his is measured using ir microscopy capturing the device under test temperature at the hottest spot of the die. at the same time, th e package temperature is measured using a thermocouple touching the backside of the die embedded in the device heatsink but sized to prevent the measurement system from impacting the results. knowing the dissipated power at the time of the measurement, the thermal resistance is calculated. in order to achieve the advertised mttf, proper heat removal must be considered to mainta in the junction at or below the maximum of 200 c. proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heat sinking systems and air flow mechanisms. incorporating t he dissipated dc power, it is possible to calculate the junction temperature of the device.

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